Pay in 4 interest-free payments of $73.75 Learn more
Ships within 48 hours · Estimated delivery Aug 18 - Aug 23
making it a candidate for two-dimensional (2D) materials research
such as magnetic random access memory (MRAM)
Optoelectronics: Bi₂O₂Se is a promising material for optoelectronic applications due to its direct band gap and the possibility of tailoring its electronic properties by controlling the number of layers
and transformers that require low-energy loss and high efficiency
Its optical absorption covers the visible-light range
HfTe2（HAFNIUM TELLURIDE） making it a candidate forEach product will include 2 to 3 pieces of samples, approximately 3 to 4mm in size. If you have any specific requirements or questions, please feel free to let us know! HfTe2 is a layered transition metal dichalcogenide (TMD) that has attracted considerable attention in recent years due to its unique electronic properties and potential applications in nanotechnology and electronics. Composed of hafnium (Hf) and tellurium (Te), HfTe2 features a
US$ 89.99
US$ 49.95
US$ 45.95
US$ 63.95
